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Achievement

Fellow develops new growth technique for hexagonal boron nitride nanosheets (hBNNS)

Trainee Achievements

Fellow develops new growth technique for hexagonal boron nitride nanosheets (hBNNS)

IGERT Fellow Brian Calderon has developed a new, potentially industrially integrable technique for the large-area growth of hexagonal boron nitride nanosheets (hBNNS) which uses chemical vapor deposition (CVD) on polycrystalline Ni foil. Boron nitride is a two-dimensional insulator that, in its hexagonal form, has similar lattice structure to graphene and very little lattice mismatch (~1.7%). In order to exploit all of the marvelous electronic properties of graphene and other two-dimensional materials, a defect-free and atomically-smooth substrate such as hBNNS is needed. This new growth technique may enable the demonstration development of two-dimensional solar cells with enhanced properties.

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