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Modeling and Analysis of an 80-Gbit/s SiGe Heterojunction Bipolar Transistor Electrooptic Modulator
Ultrafast 80-Gbit/s SiGe Heterojunction Bipolar Transistor
Figure (Left): Schematic cross-section of the proposed Heterojunction Bipolar Transistor (HBT) electrooptic (EO) modulator model. Figure (Right): One of the major electric field profiles at wavelength = 1.55 um for quasi transverse magnetic™ mode input Ey, sub-collector depth Wsub = 0.4 um and bias voltage Vbe =1.1 V.
Credits: Tuhin Guha Neogi
